An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H-SiC

作者：Declemy A^*; Oliviero E; Beaufort MF; Barbot JF; David ML; Blanchard C; Tessier Y; Ntsoenzok E

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2002, 186: 318-323.

DOI：10.1016/S0168-583X(01)00921-1

• silicon carbide
• ion implantation
• gettering
• infrared spectroscopy
• X-ray diffraction

Due to recent progress in silicon carbide (SiC) technology, understanding the behaviour of defects in SiC is a crucial challenge for the industrial development of SiC-based devices. High energy helium ion implantation at high fluence in SiC creates a few microns deep damaged layers with nanocavities, which are expected to play in important role in gettering of unwanted impurities. Post-implantation evolution of the ion implantation-induced damage is then controlled by thermal annealing. Results of an infrared reflectivity (IRR) and X-ray diffraction (XRD) study of ion implantation-induced damage in crystalline (0 0 0 1) n-type 4H-SiC implanted at room temperature with 1.6 MeV He ions at the fluence of 10(17) cm(-2) show the formation of two layers above the unperturbed crystal: a 3.4 mum deep defective strained surface layer on a 0.4 mum thick strongly perturbed interface layer, Thermal annealing at 1500 degreesC for 30 min under high vacuum was shown to induce structural recovery of the surface layer.

• 出版日期2002-1