Doping suppression and mobility enhancement of graphene transistors fabricated using an adhesion promoting dry transfer process

作者：Shin Woo Cheol; Yoon Taeshik; Mun Jeong Hun; Kim Taek Yong; Choi Sung Yool; Kim Taek Soo^*; Cho Byung Jin

来源：Applied Physics Letters, 2013, 103(24): 243504.

DOI：10.1063/1.4846317

We present the facile dry transfer of graphene synthesized via chemical vapor deposition on copper film to a functional device substrate. High quality uniform dry transfer of graphene to oxidized silicon substrate was achieved by exploiting the beneficial features of a poly(4-vinylphenol) adhesive layer involving a strong adhesion energy to graphene and negligible influence on the electronic and structural properties of graphene. The graphene field effect transistors (FETs) fabricated using the dry transfer process exhibit excellent electrical performance in terms of high FET mobility and low intrinsic doping level, which proves the feasibility of our approach in graphene-based nanoelectronics.

• 出版日期2013-12-9