Photoluminescence study of thulium-doped silicon substrates for light emitting diodes

作者：Lourenco M A^*; Opoku C; Gwilliam R M; Homewood K P

来源：Optical Materials, 2010, 32(12): 1597-1600.

DOI：10.1016/j.optmat.2010.05.026

• Electroluminescence
• Photoluminescence
• Silicon
• Thulium
• Dislocation engineering

Photoluminescence in the 1.2-1.35 mu m range has been observed in silicon substrates incorporating thulium in the trivalent Tm(3+) state and co-doped with boron. The results showed eight sharp lines at 1211.5, 1231.0, 1250.8, 1269.3, 1283.8, 1290.6, 1311.3 and 1326.0 nm, corresponding to known internal Tm(3+) transitions in the manifold from the (3)H(5) to the (3)H(6) ground states. The luminescence was strongly dependent on the sample fabrication processes. In this paper we will discuss the influence of Tm implantation parameters and post-implant annealing conditions on the photoluminescence response of silicon doped with Tm(3+).

• 出版日期2010-10