Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

作者：Kurosawa Masashi^*; Toko Kaoru; Kawabata Naoyuki; Sadoh Taizoh; Miyao Masanobu

来源：Solid-State Electronics, 2011, 60(1): 7-12.

DOI：10.1016/j.sse.2011.01.033

• Al-induced crystallization
• Orientation control
• Liquid phase epitaxy
• Si
• Ge

We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by 'preferential interfacial-nucleation model' considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates.

• 出版日期2011-6