Low-Frequency Three-Terminal Charge Pumping Applied to Silicon Nanowire Field-Effect Transistors

作者：Sarpatwari K^*; Awadelkarim O O; Passmore L J; Ho T T; Kuo M W; Dellas N S; Mayer T S; Mohney S E

来源：IEEE Transactions on Nanotechnology, 2011, 10(4): 871-874.

DOI：10.1109/TNANO.2010.2087392

• Charge pumping (CP)
• nanowire field-effect transistors (NWFET)

We report on the application of the charge-pumping (CP) technique to vapor-liquid-solid grown silicon nanowire (SiNW) transistors. We use an Omega gate-nanowire field-effect-transistor (OG-NWFET) structure, and we employ a modified CP method that is applicable to three terminal devices. The trap density from CP measurements correlates very well with the results obtained from subthreshold slope measurements. The relatively high trap densities measured and the observed saturation of the CP signal with the measurement frequency are discussed in terms of device dimensions and geometry.

• 出版日期2011-7