AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure

作者：Fang Yulong^*; Feng Zhihong; Yin Jiayun; Zhou Xingye; Wang Yuangang; Gu Guodong; Song Xubo; Lv Yuanjie; Li Chengming; Cai Shujun

来源：IEEE Transactions on Electron Devices, 2014, 61(12): 4084-4089.

DOI：10.1109/TED.2014.2364457

• 3-D electron slab
• current collapse
• field-effect transistors (FETs)
• graded heterostructure
• linearity

The design, fabrication, and characterization of AlGaN/GaN polarization-doped field-effect transistors (PolFETs) with graded heterostructure are presented in this paper. The 3-D profiles of carriers are obtained across the graded AlGaN/GaN heterostructure grown on a sapphire substrate, which brings about some novel features. The dc transfer and frequency characteristics exhibit bias-insensitive throughout the low-and high-voltage operating regions, demonstrating the potential for high linearity applications. In addition, dynamic I-V measurement was carried out to analyze the trapping behaviors. Negligible current collapses were observed in the unpassivated PolFETs with graded heterostructure, which can be explained in the aspect of unique energy band profiles of AlGaN/GaN graded heterostructures.

• 出版日期2014-12
• 单位北京科技大学