Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells

作者：Murotani Hideaki^*; Akase Daiki; Anai Koji; Yamada Yoichi; Miyake Hideto; Hiramatsu Kazumasa

来源：Applied Physics Letters, 2012, 101(4): 042110.

DOI：10.1063/1.4739431

The internal quantum efficiency (IQE) of Si-doped AlGaN quantum wells has been studied by means of photoluminescence spectroscopy. Analysis of the IQE as a function of doping region revealed that the IQE increased from 19% to 40% with doping of the well layers. This increase was attributed to an improvement in the interface quality between well and barrier layers as well as a reduction in point defect density. Moreover, the IQE increased to a maximum of 50% and then decreased with increasing Si concentration of the well layers. This indicated the existence of an optimum Si concentration for IQE improvement.

• 出版日期2012-7-23