摘要

In order to understand how hydrogen loaded by plasma in F82H is removed by annealing at elevated temperatures in vacuum, depth profiles of plasma-loaded hydrogen were examined by means of a tritium imaging plate technique. %26lt;br%26gt;Owing to large hydrogen diffusion coefficients in F82H, the plasma-loaded hydrogen easily penetrates into a deeper region becoming solute hydrogen and desorbs by thermal annealing in vacuum. However the plasma-loading creates new hydrogen trapping sites having larger trapping energy than that for the intrinsic sites beyond the projected range of the loaded hydrogen. Some surface oxides also trap an appreciable amount of hydrogen which is more difficult to remove by the thermal annealing.

  • 出版日期2013-12-15