Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation

作者：Fukata N^*; Chen J; Sekiguchi T; Okada N; Murakami K; Tsurui T; Ito S

来源：Applied Physics Letters, 2006, 89(20): 203109.

DOI：10.1063/1.2372698

Local vibrational modes of boron (B) in silicon nanowires (SiNWs) synthesized by laser ablation were observed at about 618 and 640 cm(-1) by Raman scattering measurements. Boron doping was performed during the growth of SiNWs. Fano [Phys. Rev. 124, 1866 (1961)] broadening was also observed in the Si optical phonon peak. These results prove that B atoms were doped in the SiNWs. Hydrogen (H) passivation of B acceptors in the SiNWs was also investigated. A broad peak was observed at around 650-680 cm(-1) after hydrogenation, demonstrating that B dopants were passivated by the formation of the well-known H-B passivation centers.

• 出版日期2006-11-13