Nonmagnetic thin layers of Ni3N

作者：Vempaire D; Fettar F^*; Ortega L; Pierre F; Miraglia S; Sulpice A; Pelletier J; Hlil E K; Fruchart D

来源：Journal of Applied Physics, 2009, 106(7): 073911.

DOI：10.1063/1.3238290

From structural analysis by x-ray diffraction, Rutherford backscattering spectroscopy, and physical investigations (magnetization and resistance), reactive sputtering assisted by microwave multidipolar plasma appears to be a powerful means for tailoring the stoichiometry of transition metal nitrides. Reactive sputtered nitride Ni layers were elaborated while keeping the Ar partial pressure constant (similar to 1.5 mu bar) and varying the N-2 partial pressure in the 0.1-0.5 mu bar range. A mixing of Ni2N and Ni3N and a single-phase Ni3N are stabilized in thin layers for high and low p(N-2), respectively. For the first time, an optimization of the crystallization of Ni3N pure layers is obtained for intermediate p(N-2) (0.23 mu bar). Both nitrided phases Ni2N and Ni3N, elaborated with appropriate deposition parameters, do not present ferromagnetic behavior in contrast to experimental results in the literature. Theoretical results using the full-potential linearized augmented plane wave method confirm the nonferromagnetic behavior of nitrided phases. Ni3N could be used as nonmagnetic spacer layer in spintronic devices.

• 出版日期2009-10-1
• 单位中国地震局