摘要

In the present investigation, we report the synthesis of ruthenium oxide (RuO2 center dot nH(2)O) thin films by simple chemical bath deposition (CBD) method at low temperature on the stainless steel substrate. The prepared thin films are characterized for their structural and morphological properties by means of X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM). The structural study revealed that the ruthenium oxide thin films are amorphous. Scanning electron microscopy study shows compact morphology with small overgrown particles on the surface of the substrate. FT-IR study confirms the formation of RuO2 center dot nH(2)O material. The supercapacitor behaviour of RuO2 center dot nH(2)O thin film was studied using cyclic voltammetry (CV) technique in 0 center dot 5 M H(2)SO(4)electrolyte. RuO2 center dot nH(2)O film showed maximum specific capacitance of 192 F center dot g(- 1)at a scan rate of 20 mV center dot s(- 1). The charge-discharge studies of RuO2 center dot nH(2)O carried out at 300 mu A center dot cm(- 2)current density revealed the specific power of 1 center dot 5 kW.kg(- 1)and specific energy of 41 center dot 6 Wh.kg(- 1)with 95% coulombic efficiency.

  • 出版日期2013-12

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