Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs

作者：Aadithya Karthik V^*; Demir Alper; Venugopalan Sriramkumar; Roychowdhury Jaijeet

来源：IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2013, 32(1): 73-86.

DOI：10.1109/TCAD.2012.2212897

• 1/f noise
• circuit noise
• circuit simulation
• computational modeling
• computer-aided analysis
• DRAM chips
• error probability
• failure analysis
• SRAM chips

With aggressive technology scaling and heightened variability, circuits such as SRAMs and DRAMs have become vulnerable to random telegraph noise (RTN). The bias dependence (i.e., non-stationarity), bi-directional coupling, and high inter-device variability of RTN present significant challenges to understanding its circuit-level effects. In this paper, we present two computer-aided design (CAD) tools, SAMURAI and MUSTARD, for accurately estimating the impact of non-stationary RTN on SRAMs and DRAMs. While traditional (stationary) analysis is often overly pessimistic (e. g., it overestimates RTN-induced SRAM failure rates), the predictions made by SAMURAI and MUSTARD are more reliable by virtue of non-stationary analysis.

• 出版日期2013-1