Dopant occupancy and increased exposure energy of Zr:Yb:Ho:LiNbO3 crystals

作者：Dai, Li^*; Jiao, Shanshan; Xu, Chao; Li, Dayong; Lin, Jiaqi; Chen, Chuntian

来源：Materials Research Bulletin, 2014, 53: 132-135.

DOI：10.1016/j.materresbull.2014.02.008

• Crystal growth
• Infrared spectroscopy
• Crystal structure

Yb:Ho:LiNbO3 crystals tridoped with various Zr4+ concentrations (0, 1, 2 and 5 mol%) were grown by Czochraski technique. Defect structure and dopant occupancy of Zr:Yb:Ho:LiNbO3 crystals were determined by IR transmission spectrum. The effective distribution coefficient of Zr ion increases with increasing ZrO2 concentration in the melts, which is near to one. The light-induced scattering of Zr:Yb:Ho: LiNbO3 crystals was quantitatively measured via the incident exposure energy. The exposure energy of Zr (5 mol%):Yb:Ho:LiNbO3 crystal is 49.33 J/cm(2), which is two orders higher than that of Yb:Ho:LiNbO3 crystal in magnitude. The photoconductivity is key factor to understand the internal relationship between the dopant occupancy and exposure energy of the crystals.

• 出版日期2014-5
• 单位哈尔滨工业大学; 哈尔滨学院