Driving characteristics of the electrowetting-on-dielectric device using atomic-layer-deposited aluminum oxide as the dielectric

作者：Chang Jong hyeon; Choi Dae Young; Han Seungoh; Pak James Jungho^*

来源：Microfluidics and Nanofluidics, 2010, 8(2): 269-273.

DOI：10.1007/s10404-009-0511-9

• Electrowetting on dielectric (EWOD)
• Digital microfluidics
• Aluminum oxide (Al(2)O(3))
• Atomic layer deposition (ALD)
• Single-plate configuration

Electrowetting on dielectric (EWOD) is useful in manipulating droplets for digital (droplet-based) microfluidics, but its high driving voltage over several tens of volts has been a barrier to overcome. This article presents the characteristics of EWOD device with aluminum oxide (Al(2)O(3), epsilon(r) approximate to 10) deposited by atomic layer deposition (ALD), for the first time as the high-k dielectric for lowering the EWOD driving voltage substantially. The EWOD device of the single-plate Configuration was fabricated by several steps for the control electrode array of 1 mm x 1 mm squares with 50 pin space, the dielectric layer of 1,270 angstrom thick ALD Al(2)O(3), the reference electrode of 20 mu m wide line electrode, and the hydrophobic surface treatment by Teflon-AF coating, respectively. We observed the movement of a 2 mu l water droplet in an air environment, applying a voltage between one of the control electrodes and the reference electrode in contact with the droplet. The droplet velocity exponentially depending on the applied voltage below 15 V was obtained. The measured threshold voltage to move the droplet was as low as 3 V which is the lowest voltage reported so far in the EWOD researches. This result opens a possibility of Manipulating droplets, without any surfactant or oil treatment,at only a few volts by EWOD using ALD Al(2)O(3) as the dielectric.

• 出版日期2010-2