Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride

作者：Cil K; Zhu Y; Li J; Lam C H; Silva H^*

来源：Thin Solid Films, 2013, 536: 216-219.

DOI：10.1016/j.tsf.2013.03.087

• Phase change memory
• Germanium-antimony-tellurium
• Phase transition temperature
• Face-centered cubic
• Hexagonal close-packed
• Substrate dependence
• Silicon nitride
• Silicon dioxide

The amorphous to face-centered cubic (fcc) and fcc to hexagonal close-packed (hcp) crystallization temperatures of GeSbTe thin films on underlying silicon nitride and silicon dioxide films were studied through slow(1 K/min) resistance versus temperature measurements. The amorphous to fcc phase transition is observed at similar to 170 degrees C for both cases but the fcc to hcp phase transition temperature for GeSbTe films on silicon nitride is observed to be similar to 80 degrees C lower than for GeSbTe films on silicon dioxide, possibly due to the hexagonal symmetry of silicon nitride.

• 出版日期2013-6-1