科研之友
微信
新浪微博
Facebook
分享链接
摘要
This paper presents a comprehensive review of fundamental issues, device architectures, technology development and applications of HgCdTe based avalanche photodiodes (APD). High gain, above 5 x 10(3), a low excess noise factor close to unity, THz gain-bandwidth product, and fast response in the range of pico-seconds has been achieved by electron-initiated avalanche multiplication for SWIR, MWIR, and LWIR detector applications involving low optical signals. Detector arrays with good element-to-element uniformity have been fabricated paving the way for fabrication of HgCdTe-APD FPAs.
- 出版日期2011-10
