Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer

作者：Matsumoto Tsubasa^*; Kato Hiromitsu; Makino Toshiharu; Ogura Masahiko; Takeuchi Daisuke; Yamasaki Satoshi; Imura Masataka; Ueda Akihiro; Inokuma Takao; Tokuda Norio

来源：Japanese Journal of Applied Physics, 2018, 57(4): 04FR01.

DOI：10.7567/JJAP.57.04FR01

The electrical properties of Al2O3/p-type diamond (111) MOS capacitors were studied with the goal of furthering diamond-based semiconductor research. To confirm the formation of an inversion layer in the p-type diamond body, an n-type layer for use as a minority carrier injection layer was selectively deposited onto p-type diamond. To form the diamond MOS capacitors, Al2O3 was deposited onto OH-terminated diamond using atomic layer deposition. The MOS capacitor showed clear inversion capacitance at 10 Hz. The minority carrier injection from the n-type layer reached the inversion n-channel diamond MOS field-effect transistor (MOSFET). Using the high-low frequency capacitance method, the interface state density, D-it, within an energy range of 0.1-0.5 eV from the valence band edge energy, E-v, was estimated at (4-9) x 10(12) cm(-2) eV(-1). However, the high D-it near E-v remains an obstacle to improving the field effect mobility for the inversion p-channel diamond MOSFET.

• 出版日期2018-4