Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs

作者：Gnudi A^*; Reggiani S; Gnani E; Baccarani G

来源：IEEE Electron Device Letters, 2012, 33(3): 336-338.

DOI：10.1109/LED.2011.2181153

• Cylindrical nanowire
• junctionless transistor
• random dopant fluctuations
• semiconductor device modeling
• threshold voltage variability

An analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large V-DS, including mobility variations, and for short gate lengths. The results clearly indicate that the threshold voltage fluctuations can become a concern with the reduction of the critical dimensions.

• 出版日期2012-3