Analysis of Simultaneous Switching Noise and IR-Drop in Side-Contact Multilayer Graphene Nanoribbon Power Distribution Network

作者：Bhattacharya Sandip^*; Das Debaprasad; Rahaman Hafizur

来源：Journal of Circuits, Systems, and Computers, 2018, 27(1): 1850001.

DOI：10.1142/S0218126618500019

• Simultaneous switching noise
• temperature
• multilayer graphene nanoribbon
• interconnects
• IR-Drop

The work in this paper presents the analyses of temperature-dependent simultaneous switching noise (SSN) and IR-Drop in multilayer graphene nanoribbon (MLGNR) power interconnects for 16 nm ITRS technology node. A 10 x 10 standard cell-based integrated circuit is designed to analyze the SSN and IR-Drop using the proposed temperature-dependent model of MLGNR and Cu interconnect for 10 mu m interconnect length at temperatures (233 K, 300 K and 378 K). Our analysis shows that MLGNR exhibits (similar to 1.5-2 x) less SSN and (similar to 1.5-3 x) less IR-Drop as compared with traditional Cu-based power interconnects. Our analysis also shows that the average percentage of reduction in peak SSN is 52-32% (at 233 K), 53-32% (at 300 K) and 52-30% (at 378 K) less in MLGNR compared with traditional Cu-based power interconnect and the average percentage of reduction in peak IR-Drop in MLGNR is 54-31% (at 233 K), 57-29% (at 300 K) and 57-26% (at 378 K) less than that of Cu-based power interconnects.

• 出版日期2018-1