HfO2 nanocrystal memory on SiGe channel

作者：Lin Yu Hsien^*; Chien Chao Hsin

来源：Solid-State Electronics, 2013, 80: 5-9.

DOI：10.1016/j.sse.2012.10.009

• Hafnium oxide
• Nanocrystals
• Nonvolatile memories
• Flash memory
• SiGe channel

This study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it increases electron/hole injection and the enhances program/erase speeds. This study compares the characteristics of HfO2 nanocrystal memories with different oxynitride tunnel oxide thicknesses on Si and epi-SiGe substrate. Results show that the proposed nonvolatile memory possesses superior characteristics in terms of considerably large memory window for two-bits operation, high speed program/erase for low power applications, long retention time, excellent endurance, and strong immunity to disturbance.

• 出版日期2013-2