A new photocatalyzer InNxOy film grown by ArF excimer laser-induced MOCVD at low temperature (RT approximate to 200 degrees C)

作者：Yamamoto A^*; Miyanishi M; Kunishige T; Kobayashi T; Hashimoto A; Nambo Y

来源：Journal of Crystal Growth, 2007, 298: 390-393.

DOI：10.1016/j.jcrysgro.2006.10.172

• metalorganic chemical vapor deposition
• nitrides
• semiconducting indium compounds

Using the ArF excimer laser-induced MOCVD method, InNxOy thin films are grown on a glass substrate. The photolytical decomposition of NH3 enables to grow them even at room temperature. It is found that the InNxOy thin films grown at a temperature less than 250 degrees C show an excellent photocatalytic decomposition of H2S under UV irradiation, while the activity of the films grown at a temperature higher than 300 degrees C is very small, less than I of that for the low-temperature films. The excellent photocatalytic activity for the 4 low-temperature films is closely related to the amorphous phase of the films.

• 出版日期2007-1