Sp(3) content in ta-C films vs pulse bias width to the substrate: A correlative structural analysis

作者:Rahman Md Anisur*; Maguire P; Roy S S; McCann R; McKavanagh F; McLaughlin J A
来源:Diamond and Related Materials, 2009, 18(11): 1343-1347.
DOI:10.1016/j.diamond.2009.07.009

摘要

Tetrahedral amorphous carbon (ta-C) films were studied with and without applying fixed pulse bias and frequency at variable pulse widths in double bent Filtered Cathodic Vacuum Arc (FCVA) system. Both from Raman and X-ray photoelectron spectroscopy (XPS) analyses it has been observed that the ratio of sp(3)/sp(2) is maximal at pulse width of 15 mu s with fixed pulse bias 3 kV and frequency 200 Hz. Increasing or decreasing pulse width from this threshold value accompanies the decreasing sp(3) content in the film. It is also observed that with applying pulse bias width at said frequency and bias voltage G peak position was shifted to lower values and after reaching a minimum at 15 ps G peak position shifted to higher wave numbers. At the 15 ps pulse width, 3 kV bias voltage and 200 Hz frequency we have formed ta-C films with maximum sp(3) content. This study clearly suggests that it is possible to tune the ta-C film's most important properties such as percentage of sp(3) content, internal stress, and hardness by applying pulse width at particular frequency and bias voltage.

  • 出版日期2009-11