摘要

Photon-pair sources are the key devices for quantum photonic applications; most of them are optically pumped. Here we present our design of an electrically injected photon-pair source based a Bragg-reflect ion -waveguide (BRW) GalnP/AIGaInP quantum well laser and internal spontaneous parametric down conversion, targeting at the wavelengths near 1.3 mu m for signal and idler photons. We establish a model that allows us to simulate the major characteristics of the device. Our work shows the feasibility to extend the demonstration of the electrically injected BRW photon-pair source at 1.57 mu m [Boitier et al., "Electrically injected photon-pair source at room temperature," Physical Review Letters, vol. 112, no. 18, 2014, Art. no. 183901] to another technologically interested wavelength.