Arrays of doped and un-doped semiconductors for sensor applications

作者:Taliercio Thierry*; Guilengui Vilianne N'Tsame; Tournie Eric
来源:Applied Physics A-Materials Science & Processing, 2012, 109(4): 943-947.
DOI:10.1007/s00339-012-7361-0

摘要

This numerical investigation proposes to use a lamellar grating of doped semiconductors as the active region of a nanoplasmonic biosensing device. Working with highly doped semiconductors instead of a metal allows controlling the value of the plasma frequency. It is possible to reach a plasma frequency close to the range of detection of the sensor to improve its sensitivity. A red shift of the plasmonic resonance of 10.2 nm for a 10(-2) refractive index unit increase can be achieved.

  • 出版日期2012-12