DESIGN AND IMPLEMENTATION OF A 94/188 GHz DUAL-BAND VCO WITH GAIN-ENHANCED FREQUENCY DOUBLER IN 90 nm CMOS

作者：Lin Yo Sheng^*; Lin Yu Ching; Lan Kai Siang

来源：Microwave and Optical Technology Letters, 2017, 59(3): 675-681.

DOI：10.1002/mop.30369

• CMOS
• push-push VCO
• frequency doubler
• inductive series peaking
• gain enhancement

In this work, a 94/188 GHz push-push voltage-controlled oscillator (VCO) using gain-enhanced frequency doubler is demonstrated in a 90 nm CMOS process. Compared with the traditional push-push architecture, the proposed one can significantly increase the second-harmonic output signal due to the inductive series-peaking gain-enhancement of the full-wave-rectifier-based frequency doubler. In addition, low power dissipation is achieved because the bias current of the frequency doubler is reused by the cross-coupled transistors of the VCO. The VCO draws 12 mA current from a 1 V power supply, i.e. it only consumes 12 mW. At the fundamental port, the VCO achieves a tuning range of 92.6 approximate to 95 GHz and a low phase-noise of -88.2 dBc/Hz at 1 MHz offset from the center frequency. The corresponding FOM is -177 dBc/Hz. At the push-push port, the VCO achieves a tuning range of 185.2 approximate to 190 GHz and a low phase-noise of -82.5 dBc/Hz at 1 MHz offset from the center frequency. The corresponding FOM is -177.3 dBc/Hz. To the authors' knowledge, the phase noise and FOM performances of the VCO are one of the best results ever reported for a W-band or G-band CMOS VCO. The circuit occupies a small chip area of 0.58 x 0.61 mm(2), i.e. 0.35 mm(2), excluding the test pads.

• 出版日期2017-3