Well width study of InGaN multiple quantum wells for blue-green emitter

作者：Hoffmann V^*; Netzel C; Zeimer U; Knauer A; Einfeldt S; Bertram F; Christen J; Weyers M; Traenkle G; Kneissl M

来源：Journal of Crystal Growth, 2010, 312(23): 3428-3433.

DOI：10.1016/j.jcrysgro.2010.09.013

• Segregation
• High resolution X-ray diffraction
• Low press
• Metal organic vapor phase epitaxy
• Nitrides
• Semiconducting indium compounds

InGaN/GaN multiple quantum well structures emitting in the blue/green wavelength region were grown by metal organic vapor phase epitaxy. By reducing the quantum well growth time the influence of the quantum well thicknesses between 3.8 and 1.1 nm on the indium incorporation and the distribution of indium in the quantum wells in growth direction were investigated. X-ray diffraction measurements show that the average indium mole fraction in the quantum wells decreases with reducing quantum well width due to a delay in the indium incorporation at the barrier/well interface. Quantitative analysis reveals a segregation length of about 2 nm as a measure of the graded region in growth direction. Cathodoluminescence imaging reveals that the spatial variation of the wavelength is reduced with decreasing quantum well thickness down to 1.7 nm. Reducing the width of the quantum well further results in an increase of the spatial wavelength variation.

• 出版日期2010-11-15