A new integrated SOI power device based on self-isolation technology

作者：Huanmei Gao^*; Xiaorong Luo; Wei Zhang; Hao Deng; Tianfei Lei

来源：Chinese Journal of Semiconductors, 2010, 31(8).

DOI：10.1088/1674-4926/31/8/084012

• Breakdown voltage
• Buried n-islands
• Buried oxides
• High voltage integrated circuits
• Isolation performance
• Isolation technology
• Lateral electric field
• Power devices
• Self-isolation
• SOI
• SOI LDMOS
• SOI power devices

A new SOI LDMOS structure with buried n-islands (BNIs) on the top interface of the buried oxide (BOX) is presented in a p-SOI high voltage integrated circuits (p-SOI HVICs), which exhibits good self-isolation performance between the power device and low-voltage control circuits. Furthermore, both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V/μm, but also modulate the lateral electric field distribution, resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS. A 673 V BNI SOI LDMOS is experimentally obtained and presents an excellent self-isolation performance in a p-SOI HVIC. ? 2010 Chinese Institute of Electronics.

• 出版日期2010
• 单位电子科技大学