Deposition of SiOx barrier films by O-2/TMDSO RF-PECVD

作者：Zhou Mei Li; Fu Ya Bo; Chen Qiang^*; Ge Yuan Jing

来源：Chinese Physics, 2007, 16(4): 1101-1104.

• RF-PECVD
• TMDSO
• SiOx films
• barrier property

This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasma-enhanced chemical vapour deposition (PECVD) for the application of transparent barrier packaging. The variations of O-2/Tetramethyldisiloxane (TMDSO) ratio and input power in radio frequency (RF) plasma are carried out to optimize barrier vapour transmission rate (WVTR), oxygen transmission rate (OTR), and atomic force microscopy analysers. It is found that the O-2/TMDSO ratio exceeding 2:1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier (WVTR and OTR) properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.

• 出版日期2007-4
• 单位北京印刷学院