摘要

Organic memory device has emerged as an excellent candidate for the next generation storage devices due to its high performance and low production cost. In this paper, we report the fabrication and electrical characterization of an organic memory device made of vapor-phase polymerized PEDOT thin films that are highly uniform and free of PSS and free of unreacted reactants. The PEDOT memory device exhibited a typical bipolar resistive switching with a high ON/OFF current ratio of at least 10(3), which was maintained for more than 10(3) dc sweeping cycles. The device performance was stable for more than 10(5) s. Moreover, the device containing 64 cells has very high cell to cell uniformity as demonstrated by (1) at least 93% of the cells displaying the ON/OFF current ratio of at least 10(3) and (2) the deviation of the set and reset voltages from the average values being less than 0.5 V and 0.4 V, respectively. The maximum current before switching in the reset process was found to increase linearly with increase in the compliance current applied during the set process.

  • 出版日期2013-12

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