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摘要
Atomic layer deposition (ALD) of vanadium oxide (VOx) thin films, using tetrakis(dimethylamino)vanadium as the vanadium precursor, is comprehensively reported in this work. The vanadium precursor is highly volatile and can be used at room temperature for deposition. Either H2O or O-3 can be used as the coreactant for depositing VOx at 50-200 degrees C. However, partial precursor decomposition is suggested for the deposition temperature higher than 160 degrees C. The as-deposited VOx films are pure, smooth, and amorphous, and can be crystallized into monoclinic VO2 phase by postdeposition annealing under N-2 ambient. The minimum annealing temperature for film to crystallize is found, by in situ high-temperature X-ray diffraction experiments, at around 550-600 degrees C. In situ quartz crystal microbalance experiments are performed to further analyze the surface reaction mechanism involved in this ALD process.
- 出版日期2017-1
- 单位北京大学深圳研究生院
