Axial InAs/GaAs heterostructures on silicon in a nanowire geometry

作者：Somaschini C^*; Biermanns A; Bietti S; Bussone G; Trampert A; Sanguinetti S; Riechert H; Pietsch U; Geelhaar L

来源：Nanotechnology, 2014, 25(48): 485602.

DOI：10.1088/0957-4484/25/48/485602

• molecular beam epitaxy
• nanowire
• heterostructures
• X-ray diffraction
• droplet epitaxy

InAs segments were grown on top of GaAs islands, initially created by droplet epitaxy on silicon substrate. We systematically explored the growth-parameter space for the deposition of InAs, identifying the conditions for the selective growth on GaAs and for purely axial growth. The axial InAs segments were formed with their sidewalls rotated by 30 degrees compared to the GaAs base islands underneath. Synchrotron X-ray diffraction experiments revealed that the InAs segments are grown relaxed on top of GaAs, with a predominantly zincblende crystal structure and stacking faults.

• 出版日期2014-12-5