A Compact 60W X-Band GaN HEMT Power Amplifier MMIC

作者：Tao, Hong-Qi^*; Hong, Wei; Zhang, Bin; Yu, Xu-Ming

来源：IEEE Microwave and Wireless Components Letters, 2017, 27(1): 73-75.

DOI：10.1109/LMWC.2016.2630926

• AlGaN/GaN
• high electron mobility transistor (HEMT)
• high power amplifier (HPA)
• monolithic microwave integrated circuit (MMIC)
• X-band

The design and performance of a compact X-band power amplifier MMIC utilizing Nanjing Electronic Devices Institute's (NEDI's) 0.25 mu m gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. The MMIC operates in pulse conditions with typical pulse width of 100 mu sec and 10% duty cycle. An output power of 47.5 dBm to 48.7 dBm with over 20 dB power gain and a power added efficiency (PAE) of 40% to 45% over the band of 8-12 GHz under a drain voltage of 28 V have been achieved. The chip size is 3.5x3.8 mm(2) and the amplifier delivers an output power density up to 5.57 W/mm(2) over the chip area and up to 6.43 W/mm over the active periphery of the power stage. The thermal resistance is 1.7. C/W measured in CW mode.

• 出版日期2017-1
• 单位东南大学