作者：Oechsner Richard*; Pfeffer M; Frickinger J; Schellenberger M; Roeder G; Pfitzner L; Ryssel H; Fritzsche M; Kaushik V; Renaud D; Danel A; Claeys C; Bearda T; Lering M; Graef M; Murphy B; Walther H; Hury S
来源：IEEE Transactions on Semiconductor Manufacturing, 2007, 20(3): 215-221.
DOI：10.1109/TSM.2007.901828
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