Numerical simulation study of electrostatically defined silicon double quantum dot device

作者：Sulthoni Muhammad Amin^*; Kodera Tetsuo; Uchida Ken; Oda Shunri

来源：Journal of Applied Physics, 2011, 110(5): 054511.

DOI：10.1063/1.3627238

Coupled quantum dots are of great interest for the application of quantum computing. The aspect needing attention is the preparation of well-defined quantum dots with small sizes and interdot distances. We propose a novel electrostatics method to form silicon double quantum dots. Three-dimensional numerical simulations were used to confirm the concept and study the mechanism controlling the tunnel barrier using the side gates. We estimate the electron number in each quantum dot to be less than five electrons. The prospect in creating ultrasmall quantum dots that operate at the few-electron regime, as well as exhibit processing simplicity is the great advantage of this method over those previously reported.

• 出版日期2011-9-1