Distributions of metal impurities in multicrystalline silicon materials

作者：Buonassisi T; Istratov A A^*; Pickett M D; Heuer M; Kalejs J P; Hahn G; Marcus M A; Lai B; Cai Z; Heald S M; Ciszek T F; Clark R F; Cunningham D W; Gabor A M; Jonczyk R; Narayanan S; Sauar E; Weber E R

来源：Progress in Photovoltaics: Research and Applications , 2006, 14(6): 513-531.

DOI：10.1002/pip.690

• multicrystalline silicon solar cells
• transition metal impurities
• contamination
• crystal growth
• synchrotron-based analytical X-ray microprobe techniques

We present a comprehensive summary of our observations of metal-rich particles in multicrystalline silicon (mc-Si) solar cell materials from multiple vendors, including directionally-solidified ingot-grown, sheet, and ribbon, as well as multicrystalline float zone materials contaminated during growth. In each material, the elemental nature, chemical states, and distributions of metal-rich particles are assessed by synchrotron-based analytical x-ray microprobe techniques. Certain universal physical principles appear to govern the behavior of metals in nearly all materials: (a) Two types of metal-rich particles can be observed (metal silicide nanoprecipitates and metal-rich inclusions up to tens of microns in size, frequently oxidized), (b) spatial distributions of individual elements strongly depend on their solubility and diffusivity, and (c) strong interactions exist between metals and certain types of structural defects. Differences in the distribution and elemental nature of metal contamination between different mc-Si materials can largely be explained by variations in crystal growth parameters, structural defect types, and contamination sources.

• 出版日期2006-9