科研之友
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摘要
Focused ion beam (FIB) is used to implant Ga+ ions into a 30-nm thick magnetoresistive element to effectively reduce the track width of the sensor from 1 mu m to similar to 80 nm. Through magnetic recording industry-standard spinstand measurements, it is confirmed that a dose of similar to 10(3) ions/cm(2) at a 1-pA FIB current is sufficient to fully %26quot;de-activate%26apos;%26apos; magnetism in the exposed side regions. To record tracks required for spinstand tests, a FIB-trimmed ring type write head is used.
- 出版日期2013-1
