Memristive behavior of ZnO film with embedded Ti nano-layers

作者：Qin Shu Chao; Dong Rui Xin^*; Yan Xun Ling

来源：Applied Physics A, 2014, 116(1): 1-7.

DOI：10.1007/s00339-014-8450-z

The excellent memristive behavior of ZnO-based devices with embedded Ti nano-layers is obtained. The results show that inserting Ti layers can effectively reduce the switching voltages and increase the R (off)/R (on) ratio (more than 10(3)). In particular, the stable switching properties is obtained by introducing 2.5 nm Ti layer, and the devices show good sweep endurance (about 320 cycles) and a long retention time of more than 10(6) s as compared with the devices without Ti layer. A model combining the redox reaction and the oxygen vacancy-based conducting filament is proposed to explain the memory effect. The conducting filament will be formed and ruptured along fixed paths at a certain region due to the non-uniform distribution of oxygen vacancies, which is responsible for the improvement of device performance.

• 出版日期2014-7
• 单位聊城大学