摘要

A CMOS power amplifier (PA) for IEEE 802.11b/g/n/ac applications is presented, which is implemented with a 0.13-mu m standard RF CMOS process. Integrated bias circuits for the common source (CS) and common gate (CG) power transistors are proposed, which reduce the performance sensitivities of the PA according to the variations of the bias voltage and output power. Measurements show that the proposed power amplifier achieves 17.2 dBm output power with 8.1% PAE at -34 dB EVM with MCS8, 256QAM, 40 MHz, 802.11ac signal source.

  • 出版日期2016-10