科研之友
微信
新浪微博
Facebook
分享链接
摘要
We have grown 50 cm(2) mono Si ingots by the seed cast technique. The carbon and oxygen concentrations of the ingots have been significantly reduced by improving the gas flow condition and coating. The dislocation density was also reduced by eliminating the extra dislocation generation sources. Owing to these developments, the lifetime of wafers has reached 465 mu s. Finally, the efficiency of 18.7% has been achieved, which is comparable to 18.9% of the reference Czochralski (CZ) Si wafer.
- 出版日期2015-6
