Determination of silicon nitride film chemical composition to study hydrogen desorption mechanisms

作者：Benoit Daniel^*; Morin Pierre; Regolini Jorge

来源：Thin Solid Films, 2011, 519(19): 6550-6553.

DOI：10.1016/j.tsf.2011.04.130

• Silicon nitride
• Hydrogen desorption
• Dissociation reaction

To go further in the comprehension of hydrogen desorption mechanisms from PECVD (Plasma Enhanced Chemical Vapour Deposited) silicon nitride, a method to determine the chemical composition of amorphous silicon nitride films using fast and non destructive characterization techniques has been developed. In particular, Si - H, N - H, Si - Si and Si - N bond concentrations are calculated from Fourier transform infra red spectroscopy, ellipsometry and mass measurement. Next, different PECVD silicon nitride films were annealed at 600 degrees C during 2 min. Results show that hydrogen desorption from PECVD silicon nitride depends on film mass density and main chemical reactions leading to hydrogen desorption are identified thanks to the determination of Si - Si and Si - N bond concentrations.

• 出版日期2011-7-29