摘要

This letter presents a 340 GHz fundamental on-off keying modulator using 0.13 mu m CMOS technology. The proposed modulator topology is composed of a 90 degrees hybrid coupler and two series loads formed by a series inductor and a MOSFET for 340 GHz on-/off-state switching. The measured results indicate that the insertion loss is similar to 4.9 dB on average and the isolation is better than 13 dB from 330 to 347 GHz. A measured data rate of 2.5 Gb/s is demonstrated at the carrier frequency of 340 GHz.