Anti-phase domains in cubic GaN

作者：Kemper Ricarda Maria^*; Schupp Thorsten; Haeberlen Maik; Niendorf Thomas; Maier Hans Juergen; Dempewolf Anja; Bertram Frank; Christen Juergen; Kirste Ronny; Hoffmann Axel; Lindner Joerg; As Donat Josef

来源：Journal of Applied Physics, 2011, 110(12): 123512.

DOI：10.1063/1.3666050

The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, mu-Raman and cathodoluminescence spectroscopy.

• 出版日期2011-12-15