Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM

作者：Dorrance Richard^*; Alzate Juan G; Cherepov Sergiy S; Upadhyaya Pramey; Krivorotov Ilya N; Katine Jordan A; Langer Juergen; Wang Kang L; Amiri Pedram Khalili; Markovic Dejan

来源：IEEE Electron Device Letters, 2013, 34(6): 753-755.

DOI：10.1109/LED.2013.2255096

• Diode-MTJ crossbar
• magnetic tunnel junction (MTJ)
• magnetoelectric random access memory (MeRAM)
• magnetoresistive random access memory (MRAM)

This letter presents a diode-magnetic tunnel junction (MTJ) magnetic random access memory cell in a 65-nm complimentary metal-oxide-semiconductor compatible process. A voltage-controlled magnetic anisotropy switching mechanism, in addition to STT, allows for a unipolar set/reset write scheme, where voltage pulses of the same polarity, but different amplitudes, are used to switch the MTJs. A small crossbar array is constructed from 65-nm MTJs fabricated on a silicon wafer, with switching voltages similar to 1 V and thermal stability greater than 10 years, with discrete germanium diodes as access devices to allow for read/write operations. The crossbar architecture can be extended to multiple layers to create a 3-D stackable, nonvolatile memory with a sub-1F(2) effective cell size.

• 出版日期2013-6