An Investigation of DC and RF Safe Operating Area of n-p-n plus p-n-p SiGe HBTs on SOI

作者：Cheng Peng^*; Seth Sachin; Cressler John D; Cestra Greg; Krakowski Tracey; Babcock Jeff A; Buchholz Alan

来源：IEEE Transactions on Electron Devices, 2011, 58(8): 2573-2581.

DOI：10.1109/TED.2011.2157924

• n-p-n
• p-n-p
• reliability
• RF
• safe-operating area
• self-heating
• SiGe HBT
• SOA
• SOI

We have examined the reliability risks of complementary SiGe HBTs on thick-film silicon on insulator (SOI). DC stress techniques, such as reverse emitter-base (EB) stress, mixed-mode stress, and flyback measurements, were used to characterize the safe operating area of n-p-n and p-n-p SiGe HBTs fabricated on SOI substrates. The measurements were analyzed based on fundamental damage mechanisms, such as hot carriers generated at the EB and collector-base junctions during large reverse voltage, and thermal runaway as a result of high current phenomena. RF stress (using a large amplitude continuous-wave signal) was also performed to examine the reliability of complementary bipolar complementary metal-oxide-semiconductor devices and circuits in an RF context. In both cases, p-n-p SiGe HBTs were found to be more reliable than n-p-n SiGe HBTs, a fact that may offer opportunities for circuit design optimization.

• 出版日期2011-8