Multicarrier transport in epitaxial multilayer graphene

作者：Lin Yu Ming^*; Dimitrakopoulos Christos; Farmer Damon B; Han Shu Jen; Wu Yanqing; Zhu Wenjuan; Gaskill D Kurt; Tedesco Joseph L; Myers Ward Rachael L; Eddy Charles R Jr; Grill Alfred; Avouris Phaedon

来源：Applied Physics Letters, 2010, 97(11): 112107.

DOI：10.1063/1.3485671

• carrier mobility
• doping
• epitaxial layers
• graphene
• Hall effect

Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multilayer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two.

• 出版日期2010-9-13
• 单位IBM