Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC

作者：Intarasiri S^*; Dangtip S; Hallen A; Jensen J; Yu L D; Possnert G; Singkarat S

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2007, 257: 195-198.

DOI：10.1016/j.nimb.2007.01.022

• ion beam synthesis (IBS)
• silicon
• silicon carbide (SiC)
• glancing incidence X-ray diffraction (GIXRD)
• activation energy

In this experiment, carbon ions at 40 keV were implanted into (10 0) high-purity p-type silicon wafers at 400 degrees C to a fluence of 6.5 x 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at 800-1000 degrees C. Glancing incidence X-ray diffraction (GIXRD) was used to characterize the crystalline quality and estimate the grain size of nano-crystalline 3C-SiC. Activation energy for the growth of 3C-SiC was evaluated following the annealing behaviour of the GIXRD-characteristic 3C-SiC (111) peaks. It was found that the 3C-SiC was directly formed during ion implantation at this substrate temperature and the activation energy of the process was about 0.05 eV. Such a low energy was explained in terms of ion beam induced precipitate formation.

• 出版日期2007-4