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摘要
High quality AlInP epilayers have been grown by metal-organic vapor phase epitaxy (MOVPE) on GaAs substrates at different growth temperatures. CuPt-B type spontaneous atomic ordering of the epilayers has been characterized by using high resolution X-ray diffraction and low temperature photoluminescence measurement. The effect of the growth temperature on the atomic ordering of the grown AlInP epilayer has been investigated. It is observed that the ordering degree of the AlInP epilayer grown at 630 degrees C is higher than that of the samples grown at other temperatures. Transmission electron diffraction (TED) measurement shows no CuPt-A type ordering in the epilayers. The CuPt-B type ordering degree of the AlInP epilayer increases with the growth temperature at the low growth temperature range which is mainly attributed to the more phosphorus (P) dimers formed on the growth surface during the epitaxial growth. Within the high growth temperature range, the greater material growth rate at the higher growth temperature causes the reduction of the epilayer's CuPt-B type ordering.
- 出版日期2009
- 单位南阳理工学院
