Multifunctional CuO nanowire devices: p-type field effect transistors and CO gas sensors

作者：Liao L; Zhang Z; Yan B; Zheng Z; Bao Q L; Wu T; Li C M; Shen Z X; Zhang J X; Gong H; Li J C; Yu T^*

来源：Nanotechnology, 2009, 20(8): 085203.

DOI：10.1088/0957-4484/20/8/085203

We report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires. CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors (10(4) devices in a 25 mm(2) area) are fabricated and we effectively demonstrate their enhanced performance. Furthermore, CuO nanowire exhibits high and fast response to CO gas at 200 degrees C, which makes it a promising candidate for a poisonous gas sensing nanodevice.

• 出版日期2009-2-25
• 单位武汉大学; 南阳理工学院