Anomalous Electrical Properties Induced by Hot-Electron-Injection in 130-nm Partially Depleted SOI NMOSFETs Fabricated on Modified Wafer

作者：Dai, Lihua^*; Bi, Dawei; Ning, Bingxu; Hu, Zhiyuan; Song, Lei; Liu, Xiaonian; Zhang, Mengying; Zhang, Zhengxuan; Zou, Shichang

来源：IEEE Transactions on Nuclear Science, 2016, 63(5): 2731-2737.

DOI：10.1109/TNS.2016.2604342

• Buried oxide
• interface trap
• silicon ion implantation
• SOI NMOSFETs
• total dose radiation

We have investigated the direct-current characteristics of the 130-nm partially depleted SOI NMOSFETs fabricated on modified wafer with silicon ion implantation and control wafer before and after total dose radiation. Due to the deep electron traps in buried oxide, the back gate threshold voltage of the modified SOI device increases when hot electrons are injected into the buried oxide. Moreover, due to this electrons injection process, the Top-Si/buried-oxide interface produces donor-like electron traps, which results in a kink effect in I-V characteristic curve and double gm peak behavior in back gate transistor. By TCAD simulation, we have demonstrated that the deformation of the I-V curve depends on the density of the interface trap on the premise of double gm peak generation. It was speculated that hot electrons injection could produce Si-O weak bond and weak interaction with the peculiar bonding parameter at the Top-Si/BOX interface. Finally, the radiation results show that silicon ion implantation can effectively enhance the radiation hardness performance of the SOI material.

• 出版日期2016-10
• 单位中国科学院大学; 信息功能材料国家重点实验室; 中国科学院上海微系统与信息技术研究所