Annealing effect on the electrical properties and composition of a NiCrAl thin film resistor

作者:Chuang, Nai Chuan*; Lin, Jyi Tsong; Chen, Huey Ru
来源:Japanese Journal of Applied Physics, 2015, 54(12): 125502.
DOI:10.7567/JJAP.54.125502

摘要

The composition of NiCrAl thin film resistors, under different annealing conditions in a N-2 atmosphere, was investigated. The Auger electron spectrum (AES) has been used in studying the composition of NiCrAl thin films. The concentration ratio of Cr to Ni decreases when the annealing temperature increases. The electrical properties of a NiCrAl thin film resistor are affected by the concentrations of Cr and Ni, which lead to a higher temperature coefficient of resistance (TCR) and a lower sheet resistivity. The TCR of a NiCrAl thin film resistor is % 5 ppm/degrees C at a 250 degrees C annealing temperature.

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